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CEM2108E |
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| Part Number | CEM2108E |
| Manufacturer | CET |
| Description | CEM2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 19mΩ @VGS = 2.5V. RDS(ON) = 27mΩ @VG... |
| Features |
20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 19mΩ @VGS = 2.5V. RDS(ON) = 27mΩ @VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
D1 D1 D2 D2 8765
SO-8
1
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@TA = 25 C @TA = 70 C
Drain Current-Pulsed a Maximum Power Dissipation@TA = 25 C
@TA = 70 C
VDS VGS ID
IDM PD
20
±12
10
7.8... |
| Document |
 CEM2108E Data Sheet
PDF 515.95KB |
Similar Datasheet
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|---|---|---|---|---|
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Desde 2024. D4U Semiconductor.
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