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CED840G |
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| Part Number | CED840G |
| Manufacturer | CET |
| Description | CED840G/CEU840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and ... |
| Features |
500V, 7A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
500
±30
7 28 83.3 0.67
Operating and Store Temperature Range
TJ,Tstg
-55 to 150... |
| Document |
 CED840G Data Sheet
PDF 372.91KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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