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CED3080 |
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| Part Number | CED3080 |
| Manufacturer | CET |
| Description | CED3080/CEU3080 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely l... |
| Features |
30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
57 200 52 0.42
Operating and Store Temperature ... |
| Document |
 CED3080 Data Sheet
PDF 112.79KB |
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Desde 2024. D4U Semiconductor.
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