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CED21A3 |
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| Part Number | CED21A3 |
| Manufacturer | CET |
| Description | CED21A3/CEU21A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 20A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). Hi... |
| Features |
30V, 20A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
20 45 38 0.25
Operating and Store Temperature R... |
| Document |
 CED21A3 Data Sheet
PDF 327.49KB |
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Desde 2024. D4U Semiconductor.
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