BCX70JLT1 |
Part Number | BCX70JLT1 |
Manufacturer | Motorola Inc |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCX70GLT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc V... |
Features |
ACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter – Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc mAdc nAdc 45 5.0 — — Vdc Vdc 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BCX70GLT1 BCX70JLT1 BCX70KLT1 ELECTRICAL CHARACTE... |
Document |
BCX70JLT1 Data Sheet
PDF 427.82KB |
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