NCE1205 |
Part Number | NCE1205 |
Manufacturer | NCE Power Semiconductor |
Description | The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other a... |
Features |
● N-Channel VDS =12V,ID =5A RDS(ON) <32mΩ @ VGS=4.5V RDS(ON) <42mΩ @ VGS=2.5V RDS(ON) < 80mΩ @ VGS=1.8V ● P-Channel VDS = -12V,ID = -5A RDS(ON) <74mΩ @ VGS=-4.5V RDS(ON) <110mΩ @ VGS=-2.5V RDS(ON) < 220mΩ @ VGS=-1.8V ● Load Switch for Portable Devices N-channel P-channel Pin assignment Package Marking and Ordering Information Device Marking 1205 Device NCE1205 Device Package DFN2X2-6L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)... |
Document |
NCE1205 Data Sheet
PDF 365.06KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NCE12P09S |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
2 | NCE1012E |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE10G120 |
NCE Power Semiconductor |
Trench NPT IGBT | |
4 | NCE11N60 |
NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET | |
5 | NCE11N60D |
NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET | |
6 | NCE11N60F |
NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET |