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NCE01P18L |
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| Part Number | NCE01P18L |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● V... |
| Features |
● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Schematic diagram Application ● Power management in notebook computer ● Portable equipment and battery powered systems Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-251S top view Package Marking and Ordering Information Device Marking Device Device Package NCE01P18L NCE01P18L TO-251S Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless... |
| Document |
 NCE01P18L Data Sheet
PDF 298.66KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE01P18 |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE01P18D |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE01P18K |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE01P13 |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE01P13K |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 6 | NCE01P03S |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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