Busque con el número de pieza junto con el fabricante o la descripción
NCE30P12S |
Click to view a larger image
| Part Number | NCE30P12S |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM ... |
| Features |
● VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●PWM applications ●Load switch ●Power management Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 30P12 NCE30P12S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain C... |
| Document |
 NCE30P12S Data Sheet
PDF 330.66KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE30P15AS |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE30P15S |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE30P20Q |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE30P25S |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE30P28Q |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 6 | NCE30P30G |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|