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NCE0208IA |
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| Part Number | NCE0208IA |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =8A RDS(O... |
| Features |
● VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% ∆Vds TESTED! Marking and pin assignment TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package NCE0208IA NCE0208IA TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless ... |
| Document |
 NCE0208IA Data Sheet
PDF 287.13KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE0208KA |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE0202VA |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE0202Z |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE0202ZA |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE0203S |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 6 | NCE0205I |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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