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NCE01H10D |
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| Part Number | NCE01H10D |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =100A RD... |
| Features |
● VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device ... |
| Document |
 NCE01H10D Data Sheet
PDF 316.92KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE01H10 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE01H11 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE01H13 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE01H13D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE01H13WD |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | NCE01H14 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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