NCE0102M |
Part Number | NCE0102M |
Manufacturer | NCE Power Semiconductor |
Description | The NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS = 100V,ID = 2A... |
Features |
● VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply SOT-89 -3L top view Package Marking and Ordering Information Device Marking Device Device Package 0102 NCE0102M SOT-89 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol... |
Document |
NCE0102M Data Sheet
PDF 288.96KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NCE0102 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE0102Z |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE0103 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | NCE0103M |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
5 | NCE0106R |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
6 | NCE0106Z |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |