BCR166F |
Part Number | BCR166F |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | BCR166.../SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ ) BCR166/F/L3 BCR166T/W C 3 SEMB13 ... |
Features |
culation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 15 100 200 250 250 250 250 250 150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ 300
Unit V
mA mW
Tj Tstg Symbol RthJS
°C
Unit K/W
2
Jun-14-2004
BCR166.../SEMB13
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R... |
Document |
BCR166F Data Sheet
PDF 480.07KB |
Similar Datasheet
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