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BCR119S |
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| Part Number | BCR119S |
| Manufacturer | Siemens Semiconductor Group |
| Description | BCR 119S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built bias resistor (R1=4... |
| Features |
typ. max. Unit
V(BR)CEO
50 4.7 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Base-emitter breakdown voltage
V(BR)EBO
5
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
100
nA 120 630 V 0.3 0.8 1.1 6.2 kΩ
VCB = 40 V, IE = 0
DC current gain
hFE VCEsat Vi(off)
0.4
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.5
IC = 2 mA, VCE = 0.3 V
Input resistor AC Characteristics Transition frequency
R1
3.2
fT
150 3 -
MHz pF -
IC = 10 mA, VCE... |
| Document |
 BCR119S Data Sheet
PDF 42.73KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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