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BCR108S |
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| Part Number | BCR108S |
| Manufacturer | Siemens Semiconductor Group |
| Description | BCR 108S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in on package • Built in bias resistor (R1... |
| Features |
tage Values typ. max. Unit
V(BR)CEO
50 2.2 0.047 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100 164
nA
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO
-
VEB = 5 V, IC = 0
DC current gain
hFE
70 -
V 0.3 0.8 1.1 2.9 0.052 kΩ -
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
VCEsat Vi(off)
0.4
IC = 50 mA, IB = 2.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.5
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
R1 R1/R2
1.5 0.042
AC Characteristics Transition frequ... |
| Document |
 BCR108S Data Sheet
PDF 43.95KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCR108 |
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| 2 | BCR108 |
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| 3 | BCR108F |
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| 4 | BCR108L3 |
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| 5 | BCR108S |
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| 6 | BCR108T |
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Desde 2024. D4U Semiconductor.
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