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BCP55-10 |
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| Part Number | BCP55-10 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BCP54...BCP56 NPN Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP) 4 3 2 1 V... |
| Features |
erature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
1 1.5 100 200 1.5 150 -65 ... 150
A mA W °C
Thermal Resistance Junction - soldering point1) RthJS
17
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
2
Nov-29-2001
BCP54...BCP56
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max.
Unit
V 45 60 80 100 20 nA µA -
BCP54 BCP55 BCP56
Collector-base breakdown voltage IC = 100 µA, IE = 0
V(BR)CBO
BCP54 BCP55 B... |
| Document |
 BCP55-10 Data Sheet
PDF 48.04KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCP55-10 |
NXP |
NPN medium power transistors |
|
| 2 | BCP55-10T |
nexperia |
1A NPN medium power transistors |
|
| 3 | BCP55-16 |
NXP |
NPN medium power transistors |
|
| 4 | BCP55-16 |
Infineon Technologies AG |
NPN Silicon AF Transistors |
|
| 5 | BCP55-16T |
nexperia |
1A NPN medium power transistors |
|
| 6 | BCP55 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|
Desde 2024. D4U Semiconductor.
|