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BFQ135 |
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| Part Number | BFQ135 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. PINNING 2 fpage BFQ135 4 3 1 PIN 1 2, 4 3 DESCRIPTION collecto... |
| Features |
• Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization. APPLICATIONS • MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM PARAMETER collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tc ≤ 145 °C IC = 120 mA; VCE = 18 V; Tamb = 25 °C IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C open base CONDITIONS MIN. − − − 55 − − − − ... |
| Document |
 BFQ135 Data Sheet
PDF 78.62KB |
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