2SD1309 INCHANGE Silicon NPN Darlington Power Transistor Datasheet. existencias, precio

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2SD1309

INCHANGE
2SD1309
2SD1309 2SD1309
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Part Number 2SD1309
Manufacturer INCHANGE
Description ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A ·Minimum Lot-to-L...
Features CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 2V hFE-2 DC Current Gain IC= 5A ; VCE= 2V ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A ,RL= 16.7Ω, IB1= IB2= 3mA,VCC≈ 50V
 hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 2SD...

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