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BFP360 |
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| Part Number | BFP360 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFP360W NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 G... |
| Features |
Jun-16-2003
BFP360W
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO ICES ICBO IEBO hFE
6 60
9 130
10 100 1 200
V µA nA µA -
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 15 mA, VCE = 3 V
2
Jun-16-2003
BFP360W
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. ... |
| Document |
 BFP360 Data Sheet
PDF 99.49KB |
Similar Datasheet
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