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BFP196 |
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| Part Number | BFP196 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power a... |
| Features |
eter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
105 K/W
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-04
BFP196
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 ... |
| Document |
 BFP196 Data Sheet
PDF 543.79KB |
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