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BFP196 |
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| Part Number | BFP196 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BFP 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier ... |
| Features |
BFP 196
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 50 mA, VCE = 8 V
Semiconductor Group
2
Dec-13-1996
BFP 196
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Char... |
| Document |
 BFP196 Data Sheet
PDF 60.94KB |
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