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BFP193 |
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| Part Number | BFP193 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Q... |
| Features |
e definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-07
BFP193
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V, pulse measured
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 1 µA
hFE 70 100 140 ... |
| Document |
 BFP193 Data Sheet
PDF 536.39KB |
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