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BFP136W |
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| Part Number | BFP136W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handlin... |
| Features |
ollector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 50 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 80 mA, VCE = 5 V
Semiconductor Group
2
Jan-20-1997
BFP 136W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
4 5.5 1.7 0.7 6.8 -
GHz pF 2.5 dB 2 3.3 -
IC = 80 mA, VCE = ... |
| Document |
 BFP136W Data Sheet
PDF 60.59KB |
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