BF660W |
Part Number | BF660W |
Manufacturer | Siemens Semiconductor Group |
Description | BF 660W PNP Silicon RF Transistor • For VHF oscillator applications Type BF 660W Marking Ordering Code LEs Q62702-F1568 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Co... |
Features |
ain
hFE
IC = 3 mA, VCE = 10 V
AC Characteristics Transition frequency
fT
700 0.4 0.15 -
MHz pF -
IC = 5 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0 , f = 1 MHz
Semiconductor Group
2
Aug-14-1996
BF 660W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot
200
TS
150
TA
100
50
0 0 20 40 60 80 100 120 °C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
K/W
RthJS
10 2
Ptot... |
Document |
BF660W Data Sheet
PDF 59.42KB |
Similar Datasheet
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