Busque con el número de pieza junto con el fabricante o la descripción
BLF6G10LS-200RN |
Click to view a larger image
| Part Number | BLF6G10LS-200RN |
| Manufacturer | Ampleon |
| Description | 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test... |
| Features |
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: Average output power = 40 W Power gain = 20 dB Efficiency = 28.5 % ACPR = 39 dBc ... |
| Document |
 BLF6G10LS-200RN Data Sheet
PDF 363.92KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BLF6G10LS-200R |
NXP Semiconductors |
Power LDMOS transistor |
|
| 2 | BLF6G10LS-200 |
NXP Semiconductors |
Power LDMOS transistor |
|
| 3 | BLF6G10LS-135R |
NXP Semiconductors |
Power LDMOS transistor |
|
| 4 | BLF6G10L-40BRN |
NXP Semiconductors |
Power LDMOS transistor |
|
| 5 | BLF6G10-200RN |
Ampleon |
Power LDMOS transistor |
|
| 6 | BLF6G10-45 |
NXP |
Power LDMOS Transistor |
|
Desde 2024. D4U Semiconductor.
|