2SC4421 |
Part Number | 2SC4421 |
Manufacturer | INCHANGE |
Description | · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performan... |
Features |
unless otherwise specified
SYMBOL
PARAMETER
INCHANGE Semiconductor
2SC4421
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
10
hFE-2
DC Current Gain
IC= 1.5A; VCE= 5V
6
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V; f= 1MHz
5
MHz... |
Document |
2SC4421 Data Sheet
PDF 184.13KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC4420 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
2 | 2SC4422 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SC4423 |
Sanyo Semicon Device |
NPN Transistor | |
4 | 2SC4423 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC4423 |
INCHANGE |
NPN Transistor | |
6 | 2SC4424 |
Sanyo Semicon Device |
NPN Transistor |