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IRF2204L |
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| Part Number | IRF2204L |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to ... |
| Features |
● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in... |
| Document |
 IRF2204L Data Sheet
PDF 223.47KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF2204 |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 2 | IRF2204 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF2204PBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF2204S |
International Rectifier |
Power MOSFET |
|
| 5 | IRF2204S |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRF220 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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