logo

BDX34A Fairchild Semiconductor PNP Epitaxial Silicon Transistor Datasheet

BDX34A TRANS PNP 60V 10A TO220-3


Fairchild Semiconductor
BDX34A
Part Number BDX34A
Manufacturer Fairchild Semiconductor
Description BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol V...
Features 34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Cut-off Current : BDX34 : BDX34A : BDX34B : BDX34C ICEO Collector Cut-off Current : BDX34 : BDX34A : BDX34B : BDX34C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX34/34A : BDX34B/34C VCE(sat) * Collector-Emitter Saturation Voltage : BDX34/34A : BDX34B/34C * Base-Emitter ON Voltage : BDX34/34A : BDX34B/34C * Parallel Diode Forward Voltage VCE = - 3V, IC = - 4A VCE = - 3V, IC = - 3A IC = - 4A, IB = - 8mA IC = - 3A, IB = - 6mA VCE = - 3V, IC = - 4A VCE = - 3V, IC = - 3A IF =...

Document Datasheet BDX34A datasheet pdf (39.43KB)
Distributor Distributor
DigiKey
Stock 1070 In Stock
Price
1070 units: 0.3 USD
BuyNow BuyNow BuyNow (Manufacturer a Rochester Electronics LLC)




BDX34A Distributor

Rochester Electronics LLC
BDX34A
TRANS PNP 60V 10A TO220-3
1070 units: 0.3 USD
Distributor
DigiKey

1070 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
BDX34A
Power Bipolar Transistor, 10A, 60V, PNP, TO-220AB, 3 Pin '
1000 units: 0.261 USD
500 units: 0.2764 USD
100 units: 0.2887 USD
25 units: 0.301 USD
1 units: 0.3071 USD
Distributor
Rochester Electronics

1070 In Stock
BuyNow BuyNow
Harris Semiconductor
BDX34A
Bipolar Junction Transistor, Darlington, PNP Type, TO-220AB
1 units: 0.51 USD
Distributor
Quest Components

7 In Stock
BuyNow BuyNow
Mospec Semiconductor Corp
BDX34A
Power Bipolar Transistor, 10A I(C), PNP
No price available
Distributor
ComSIT Asia

3860 In Stock
No Longer Stocked
.
BDX34A
No price available
Distributor
Bristol Electronics

11 In Stock
No Longer Stocked





BDX34A Similar Datasheet

Part Number Description
BDX30
manufacturer
Siemens Semiconductor Group
PNP SILICON PLANAR TRANSISTORS
...
BDX33
manufacturer
Fairchild Semiconductor
NPN Epitaxial Silicon Transistor
BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG ©2000 ...
BDX33
manufacturer
CDIL
NPN/PNP PLASTIC POWER TRANSISTORS
SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD Tj, Tstg Rth(j-c) BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 UNIT V V V 10 A 15 A 0.25 A 70 W 0.56 W/ºC -65 to +150 ºC 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D UNIT Breakdown (sus) Voltage Colle...
BDX33
manufacturer
MCC
NPN Silicon Power Darlingtons
MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BDX33 THRU BDX33D 0,9:708 • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Designed For Complementary Use with BDX34, BDX34A, BDX34B, :BDX34C and BDX34D • 70W at 25 Cass Temperature NPN Silicon Power Darlingtons • 10A Continuous Collector Current • Minimum hFE of 750 at 3.0V, 3.0A • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 °$EVROXWH 0D[LPXP 5DWLQJV #  & 8QOHVV 2WKHUZLVH 1RWHG TO-220 Symbol VCBO VCEO VEBO IC IB PTOT PTOT TJ TSTG TA Rating Co...
BDX33
manufacturer
Bourns Electronic Solutions
NPN Transistor
www.DataSheet4U.com BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70 W at 25°C Case Temperature 10 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) ● ● ● 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDX33 BDX33A Collector-base voltage (IE = 0) BDX33B BDX33C BDX33D BDX33 BDX33A Collector-emitter voltage (IB = 0) BDX33B BDX33C BDX33D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at ...
BDX33
manufacturer
Micro Commercial Components
NPN Silicon Power Darlingtons
MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BDX33 THRU BDX33D NPN Silicon Power Darlingtons 0,9:708 • • • • • • • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70W at 25 Cass Temperature 10A Continuous Collector Current Minimum hFE of 750 at 3.0V, 3.0A : Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 $EVROXWH 0D[LPXP 5DWLQJV #  °& 8QOHVV 2WKHUZLVH 1RWHG Value 45 60 80 100 100 45 60 80 100 100 5.0 10 0.3 70 2.0 -55~+1...
BDX33
manufacturer
TRANSYS
(BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS
SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD www.DataSheet.net/ BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 10 15 0.25 70 0.56 -65 to +150 UNIT V V V A A A W W/ºC ºC Tj, Tstg Rth(j-c) 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D Breakdown (sus) Voltage VCEO...
BDX33
manufacturer
Comset Semiconductors
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.DataSheet.net/ Value BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C 45 60 80 100 45 60 80 100 10 15 0.25 70 -65 to +150 Unit VCEO Collector-Emitter Voltage IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) ICM @ TC = ...
BDX33
manufacturer
INCHANGE
NPN Transistor
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 4A ·Complement to Type BDX34 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 45 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperat...
BDX33
manufacturer
Multicomp
Darlington Transistors
BDX33, 34 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN BDX33B BDX33C PNP BDX34B BDX34C 10 Ampere Complementary Silicon Power Transistors 80 - 100 Volts 70 Watts TO-220 Page 1 31/05/05 V1.0 BDX33, 34 Darlington Transi...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy