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C3M0065100J |
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| Part Number | C3M0065100J |
| Manufacturer | CREE |
| Description | VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology ... |
| Features |
Package
• C3MTM SiC MOSFET technology TAB • Low parasitic inductance with separate driver source pin Drain • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Increase power density • Increase system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Suppli... |
| Document |
 C3M0065100J Data Sheet
PDF 0.98MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3M0065100J |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 2 | C3M0065100K |
Cree |
Silicon Carbide Power MOSFET |
|
| 3 | C3M0065090D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 4 | C3M0065090D |
Cree |
Silicon Carbide Power MOSFET |
|
| 5 | C3M0065090J |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 6 | C3M0065090J |
Cree |
Silicon Carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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