ME7806S-G |
Part Number | ME7806S-G |
Manufacturer | Matsuki |
Description | The ME7806S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize o... |
Features |
● RDS(ON) ≦8.5mΩ@VGS=10V ● RDS(ON) ≦16.5mΩ@VGS=4.5V APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (DFN(S) 3.3x3.3) Top View e Ordering Information: ME7806S-G (Green product-Halogen free) Absolute Maximum Ratings (TA =25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Con... |
Document |
ME7806S-G Data Sheet
PDF 1.10MB |
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