CS20J65AN |
Part Number | CS20J65AN |
Manufacturer | HUAJING MICROELECTRONICS |
Description | CS20J65 AN, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The... |
Features |
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
VDSS ID PD(TC=25℃) RDS(ON)max
650 V 20 A 180 W 0.18 Ω
Symbol Parameter
VDSS
ID IDMa1
VGS EAS a2 dv/dta3
PD TJ,Tstg
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating Junct... |
Document |
CS20J65AN Data Sheet
PDF 459.61KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS20J65A0-G |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
2 | CS20J65FA9 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
3 | CS20-12io1 |
IXYS |
Thyristor | |
4 | CS20-14io1 |
IXYS |
Thyristor | |
5 | CS20-16io1 |
IXYS |
Thyristor | |
6 | CS20-22moF1 |
IXYS |
High Voltage Phase Control Thyristor |