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HPA600R1K0DN |
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| Part Number | HPA600R1K0DN |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | HPA600R1K0DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energ... |
| Features |
l Superior switching performance l Low on resistance(Rdson≤1Ω) l Low gate charge (Typical Data:20.2nC) l Low reverse transfer capacitances(Typical:17.8pF) l 100% Single pulse avalanche energy test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse... |
| Document |
 HPA600R1K0DN Data Sheet
PDF 390.64KB |
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Desde 2024. D4U Semiconductor.
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