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CS5J65FB9-G |
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| Part Number | CS5J65FB9-G |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | CS5J65F B9-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. T... |
| Features |
Fast Switching Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 650 V 5A 28 W 0.9 Ω Symbol VDSS ID IDMa1 VGSS EAS a2 dv/dt a3 PD TJ，Tstg TL Parameter Drain-to-Source Voltage(VGS=0V) Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt ... |
| Document |
 CS5J65FB9-G Data Sheet
PDF 533.98KB |
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