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ME80N75T |
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| Part Number | ME80N75T |
| Manufacturer | Matsuki |
| Description | The ME80N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
| Features |
● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME80N75T (Pb-free) ME80N75T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current* TC=25℃ TC=70℃ ID 93 78 A Pulsed Drain Current IDM 372 A Maximum Power Dissipation TC=25℃ TC=70℃ PD 200 140 W ... |
| Document |
 ME80N75T Data Sheet
PDF 1.10MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME80N75AF |
Matsuki |
N-Channel MOSFET |
|
| 2 | ME80N75AF-G |
Matsuki |
N-Channel MOSFET |
|
| 3 | ME80N75AT |
Matsuki |
N-Channel MOSFET |
|
| 4 | ME80N75AT-G |
Matsuki |
N-Channel MOSFET |
|
| 5 | ME80N75F |
Matsuki |
N-Channel MOSFET |
|
| 6 | ME80N75F-G |
Matsuki |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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