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ME100N03T |
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| Part Number | ME100N03T |
| Manufacturer | Matsuki |
| Description | The ME100N03T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to... |
| Features |
● RDS(ON)≦3mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-220) Top View * The Ordering Information: ME100N03T /ME100N03T-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current* TC=25℃ TC=70℃ ID 172 144 A Pulsed Drain... |
| Document |
 ME100N03T Data Sheet
PDF 0.96MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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