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IS45S16100H |
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| Part Number | IS45S16100H |
| Manufacturer | ISSI |
| Description | ISSI’s 16Mb Synchronous DRAM IS42/4516100H is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture... |
| Features |
• Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • B... |
| Document |
 IS45S16100H Data Sheet
PDF 1.44MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS45S16100C1 |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
|
| 2 | IS45S16100E |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
|
| 3 | IS45S16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM |
|
| 4 | IS45S16160C |
Integrated Silicon Solution |
256 Mb Single Data Rate Synchronous DRAM |
|
| 5 | IS45S16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |
|
| 6 | IS45S16160G |
ISSI |
256Mb SYNCHRONOUS DRAM |
|
Desde 2024. D4U Semiconductor.
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