BLV90 |
Part Number | BLV90 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES BLV90 • diffused emitter-ballasting resistors for an optimum temperature profile. ... |
Features |
BLV90
• diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance at Ta = 25 °C in a common-emitter class-B circuit.(1) MODE OF OPERATION Narrow band; CW VCE V 12.5 9.6 Note 1. Device mounted on a printed-circuit board (see Fig.6). PIN CONF... |
Document |
BLV90 Data Sheet
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