BLV857 |
Part Number | BLV857 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connec... |
Features |
• Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATION • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange. 5 3 Top view 4 b2 BLV857 PINN... |
Document |
BLV857 Data Sheet
PDF 138.80KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BLV859 |
NXP |
UHF linear push-pull power transistor | |
2 | BLV830 |
BELLING |
N-Channel Enhancement Mode Power MOSFET | |
3 | BLV840 |
BELLING |
N-Channel Enhancement Mode Power MOSFET | |
4 | BLV861 |
NXP |
UHF linear push-pull power transistor | |
5 | BLV862 |
NXP |
UHF linear push-pull power transistor | |
6 | BLV88N30 |
BELLING |
N-Channel Enhancement Mode Power MOSFET |