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BLV25 |
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| Part Number | BLV25 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. FEATURES • internally matched input for wideband operation and high power gain; • multi-base structur... |
| Features |
• internally matched input for wideband operation and high power gain; • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; • gold-metallization ensures excellent reliability. The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit. MODE OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 28 f MHz 108 PL W 175 PS W < 17,5 Gp dB > 10,0 PINNING PIN 1 handbook, halfpage BLV25 η % > 65 DESC... |
| Document |
 BLV25 Data Sheet
PDF 83.71KB |
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