RD10E |
Part Number | RD10E |
Manufacturer | EIC |
Description | RD2.0E ~ RD39E VZ : 2.0 - 39 Volts PD : 500 mW FEATURES : * Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA Cas... |
Features |
:
* Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free
MECHANICAL DATA
Case: DO-35 Glass Case Weight: approx. 0.13g
SILICON ZENER DIODES DO - 35
0.079(2.0 )max. 0.020 (0.52)max.
1.00 (25.4) min.
0.150 (3.8) max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
Power Dissipation
Forward Current
Junction Temperature Range
Storage Temperature Range
Symbol
PD IF Tj Ts
Value
500 200 - 55 to + 175 - 55 to + 175
Unit
mW mA °C °C
... |
Document |
RD10E Data Sheet
PDF 37.30KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | RD1004LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode | |
2 | RD1006LN |
Sanyo Semicon Device |
High-Speed Switching Diode | |
3 | RD1006LS |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode | |
4 | RD1006LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode | |
5 | RD100E |
NEC |
500 mW DHD ZENER DIODE DO-35 | |
6 | RD100E |
Renesas |
500mW PLANAR TYPE SILICON ZENER DIODES |