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BT169 |
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| Part Number | BT169 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended t... |
| Features |
gles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -40 B 2001 MAX. D 4001 E 5001 G 6001 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C
VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current
0.63 1 8 9 0.32 50 1 5 5 2 0.1 150 125
I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate p... |
| Document |
 BT169 Data Sheet
PDF 105.41KB |
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Desde 2024. D4U Semiconductor.
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