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BT150M-800R |
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| Part Number | BT150M-800R |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Glass passivated, sensitive gate thyristors in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intend... |
| Features |
IONS MIN. half sine wave; Tmb ≤ 111 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 2.5 4 35 38 6.1 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C
VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current
I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate volt... |
| Document |
 BT150M-800R Data Sheet
PDF 49.46KB |
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Desde 2024. D4U Semiconductor.
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