BSP62 |
Part Number | BSP62 |
Manufacturer | Siemens Semiconductor Group |
Description | PNP Silicon Darlington Transistors BSP 60 … BSP 62 High collector current q Low collector-emitter saturation voltage q Complementary types: BSP 50 … BSP 52 (NPN) q Type BSP 60 BSP 61 BSP 62 Markin... |
Features |
Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage1) IC = 10 mA, RBE = 150 Ω BSP 60 BSP 61 BSP 62 Collector-base breakdown voltage IC = 100 µA, IB = 0 BSP 60 BSP 61 BSP 62 Emitter-base breakdown voltage IE = 100 µA, IB = 0 Collector-emitter cutoff current VCE = VCERmax, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA Base-emitter saturation voltage2) IC = ... |
Document |
BSP62 Data Sheet
PDF 153.39KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP60 |
NXP |
PNP Darlington transistors | |
2 | BSP60 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors | |
3 | BSP60 |
nexperia |
PNP Darlington transistor | |
4 | BSP603S2L |
Infineon Technologies AG |
OptiMOS Power-Transistor | |
5 | BSP61 |
NXP |
PNP Darlington transistors | |
6 | BSP61 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |