BSP615S2L |
Part Number | BSP615S2L |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
breakdown voltage
V GS=0V, I D=1mA
Symbol min.
V(BR)DSS VGS(th) I DSS
Values typ. 1.6 max. 2
Unit
55 1.2
V
Gate threshold voltage, VGS = VDS
ID=12µA
Zero gate voltage drain current
V DS=55V, V GS=0V, Tj=25°C V DS=55V, V GS=0V, Tj=125°C2)
µA 0.1 10 10 86 67 1 100 100 150 90 nA mΩ
Gate-source leakage current
V GS=20V, VDS=0V
I GSS RDS(on) RDS(on)
-
Drain-source on-state resistance
V GS=4.5V, ID=1.4A
Drain-source on-state resistance
V GS=10V, ID=1.4A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without... |
Document |
BSP615S2L Data Sheet
PDF 212.62KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP61 |
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2 | BSP61 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) | |
3 | BSP61 |
Infineon Technologies AG |
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4 | BSP612P |
Infineon |
Small-Signal-Transistor | |
5 | BSP613P |
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6 | BSP60 |
NXP |
PNP Darlington transistors |