BSP320S |
Part Number | BSP320S |
Manufacturer | Siemens Semiconductor Group |
Description | BSP 320 S SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 60 V ID 2.9 A RDS(on) 0.12 Ω Packag... |
Features |
Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1
Tj Tstg RthJA RthJS
-55 ... + 150 -55 ... + 150
°C
≤ 70
17 55 / 150 / 56
K/W
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
*) MIL STD 883, Method 3015, Class 2
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 60 -
Gate threshold voltage
V GS=V DS, ID = 20 µA
V GS(th)
2.1
IDSS
3
4 µA... |
Document |
BSP320S Data Sheet
PDF 130.49KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP320 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) | |
2 | BSP320 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
3 | BSP320S |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
4 | BSP32 |
NXP |
PNP medium power transistors | |
5 | BSP32 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER | |
6 | BSP321P |
Infineon Technologies |
SIPMOS Small Signal Transistor |