BSP206 |
Part Number | BSP206 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on) • Direct interfa... |
Features |
• Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP206 PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Gate threshold voltage −VDS −ID RDS(on) −VGS(th) max. max. max. max. BSP206 60 V 350 mA 6 Ω 3.5 V handbook, halfpage 4 d g 1 Top view 2 3 MAM121 s Fig.1 Simplfied outline and symbol. April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode verti... |
Document |
BSP206 Data Sheet
PDF 65.26KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP20 |
NXP |
NPN high-voltage transistors | |
2 | BSP204 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
3 | BSP204A |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
4 | BSP205 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
5 | BSP20A |
Kexin |
NPN Silicon Epitaxial Transistor | |
6 | BSP20AT1 |
Motorola Inc |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT |