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BSP135 |
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| Part Number | BSP135 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIPMOS® Small-Signal Transistor BSP 135 q q q q q q q VDS 600 V ID 0.100 A RDS(on) 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and ... |
| Features |
n epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
Semiconductor Group
1
09.96
BSP 135
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 600 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.01 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.01 A I... |
| Document |
 BSP135 Data Sheet
PDF 411.46KB |
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