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BSP130 |
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| Part Number | BSP130 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transform... |
| Features |
• Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM054 BSP130 QUICK REFERENCE DATA SYMBOL VDS ID Ptot ±VGSO RDS(on) VGS(off) PARAMETER drain-source voltage DC drain current total power dissipation drain-source on-resistance gate-source cut-off voltage CONDITIONS MIN... |
| Document |
 BSP130 Data Sheet
PDF 88.93KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP135 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
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| 2 | BSP135 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
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| 3 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
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| 4 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 5 | BSP106 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 6 | BSP107 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
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Desde 2024. D4U Semiconductor.
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