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BSP100 |
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| Part Number | BSP100 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters • Logic level translator The BSP100... |
| Features |
• ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance BSP100 SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 6 A g RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications: • Motor and relay drivers • d.c. to d.c. converters • Logic level translator The BSP100 is supplied in the SOT223 surface mounting package. PINNING PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION SOT223 4 ... |
| Document |
 BSP100 Data Sheet
PDF 111.92KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 2 | BSP106 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 3 | BSP107 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 4 | BSP108 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 5 | BSP110 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 6 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
Desde 2024. D4U Semiconductor.
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