Busque con el número de pieza junto con el fabricante o la descripción
BSM75GB120DN2 |
Click to view a larger image
| Part Number | BSM75GB120DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 75 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 75 GB 120 DN2 Maximum Ratings Parameter Collector-emitter ... |
| Features |
at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 1 4.5 6.5 3 3.7
V
VGE = VCE, IC = 3 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 75 A, Tj = 25 °C VGE = 15 V, IC = 75 A, Tj = 125 °C
Zero gate voltage collector current
ICES
1.5 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
31 5.5 0.8 0.3 -
S nF -
VCE = 20 V, IC = 75 A
In... |
| Document |
 BSM75GB120DN2 Data Sheet
PDF 112.89KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSM75GB120DLC |
eupec |
IGBT Module |
|
| 2 | BSM75GB170DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BSM75GB60DLC |
eupec |
Hchstzulssige Werte Maximum rated values |
|
| 4 | BSM75GAL120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 5 | BSM75GD120DLC |
Eupec |
IGBT Module |
|
| 6 | BSM75GD120DN2 |
Siemens Semiconductor Group |
IGBT |
|
Desde 2024. D4U Semiconductor.
|