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BSM25GB120DN2 |
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| Part Number | BSM25GB120DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Features |
25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 0.5 2 6.5 3 3.7
V
VGE = VCE, IC = 1 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj... |
| Document |
 BSM25GB120DN2 Data Sheet
PDF 111.41KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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